Dynamic random access memory device and method for self-refreshing memory cells

ABSTRACT

A dynamic random access memory (DRAM) device having memory cells is operated in a self-refresh mode and a normal mode. A mode detector provides a self-refresh mode signal in the self-refresh mode of operation. It includes a free-running oscillator for generating an oscillation signal independent of the self-refresh mode signal. In response to the oscillation signal, a self-request controller provides a self-refresh request signal in the self-refresh mode. The self-refresh signal is asynchoronized with the self-fresh mode signal and is provided to an address circuit to select a wordline for refreshing the memory cells thereof. The self-refresh request controller includes logic circuitry for arbitrating timing between initial active edges of the oscillation signal and the self-refresh mode signal and providing the self-refresh request and ceasing it, regardless of conflict between the self-refresh mode signal and the oscillation signal upon self-refresh mode entry and exit. The DRAM devices perform and achieve reliable self-refresh for variable DRAM cell retention time.

CROSS REFERENCE TO RELATED APPLICATIONS

This application is a continuation of U.S. patent application Ser. No.12/038,855 filed on Feb. 28, 2008, which is a continuation of U.S.patent application Ser. No. 11/261,493, now U.S. Pat. No. 7,369,451,filed on Oct. 31, 2005, all of which are incorporated herein byreference in their entirety.

TECHNICAL FIELD

The present invention generally relates to a semiconductor integratedcircuit and in particular to a dynamic random access memory device witha self-refresh function and a method for self-refreshing the datastorage cells of a dynamic random access memory.

BACKGROUND INFORMATION

In dynamic random access memory (DRAM) integrated circuit devices, DRAMcell arrays are typically arranged in rows and columns such that aparticular DRAM cell is addressed by specifying its row and columnwithin the array. A wordline connects a row of cells to a set of bitlinesense amplifiers that detect the data in the cells. In a read operation,a subset of the data in the sense amplifiers is then chosen, or“column-selected” for output. DRAM cells are “dynamic” in the sense thatthe stored data, typically in the form of charged and discharged storagecapacitors, will dissipate after a relatively short period of time.Thus, in order to retain the information, the contents of the DRAM cellsmust be refreshed. The charged or discharged state of the storagecapacitor must be reapplied to an individual memory cell in a repetitivemanner. The maximum amount of time allowable between refreshingoperations is determined by the charge storage capabilities of thecapacitors that make up the DRAM cell array. DRAM manufacturerstypically specify a refresh time for which it guarantees data retentionin the DRAM cells.

A refresh operation is similar to a read operation, but no data isoutput. The sensing of the data in the cells by the sense amplifiers isfollowed by a restoring operation that results in the data beingrewritten to the cells. The data is, thus, “refreshed”. The refreshoperation is performed by enabling a wordline according to a rowaddress, and enabling a sense amplifier. In addition, the refreshoperation may be carried out by operating the sense amplifier withoutreceiving an external refresh address. In this case, a refresh addresscounter that is integrated in a DRAM chip generates a row addresssubsequent to receiving an external start address.

Refresh operation is categorized as “auto-refresh” and “self-refresh”.The auto-refresh operation occurs when, during operation of the chip, arefresh command is periodically generated and received. During theauto-refresh, the receipt of other commands to the chip is interruptedand refresh is carried out. Then, the chip is allowed to receive and acton the other commands. The self refresh function is one for performingrefresh operations within the DRAM when in a standby mode to retain thedata written in its memory cells.

In order to perform the self-refresh operation, regular internal readingof cell data and rewriting that data are established in order to preventdata losses when the chip is operating in a so-called “sleep” mode. Aninternal timer controls the frequency of self-refresh. The self-refreshcontrol circuitry is comprised of an internal oscillator, a frequencydivider and a refresh count request block. Temperature monitoring andvariable refresh rate control circuitry can be included. In knowndynamic DRAM integrated circuits having a self-refresh function, anoperation mode is automatically switched to a self-refresh mode toperform self-refresh when required.

U.S. Pat. No. 4,636,989 granted to Ikuzaki on Jan. 13, 1987 discloses adynamic MOS random access memory having an automatic refresh circuit. Inthe memory, a clock generator generates refresh clock pulses when theaddress strobe signal is not produced. U.S. Pat. No. 5,365,487 grantedto Patel et al. on Nov. 15, 1994 discloses a DRAM with self-refreshmanagement. U.S. Pat. No. 5,862,093 granted to Sakakibara on Jan. 19,1999 discloses a dynamic memory device with refreshing timing signalsgenerated to detect the relevant time to perform self-refresh.

In order to obtain high-speed operation and high-density integratedcircuits, deep sub-micron CMOS processes like 90 nm, 65 nm, 45 nm havebeen introduced and implemented in many semiconductor IC devices. Forthose deep sub-micron processes, MOS transistors are scaled down (i.e.,have minimum transistor dimensions decreased) and threshold voltage Vthof the transistors are lowered. However, the lowered threshold voltageresults in significant sub-threshold leakage (i.e., leakage currentpresent for transistor gate voltages below a threshold voltage) andtherefore, semiconductor ICs based on such lowered threshold voltagesconsume more power in normal operation as well as in a power saving modeof operation. Since a DRAM cell includes a minimally sized accesstransistor for coupling the storage capacitor to a bitline, the storedcharge can quickly leak from the storage capacitor. Therefore, morefrequent “self-refresh” operations are required.

Semiconductor integrated circuits (ICs) are becoming smaller toaccommodate more transistors in a single chip and to achieve fasteroperating speeds. However, smaller and faster CMOS type transistors havehigher leakage currents and this leakage current issue is becoming aserious design challenge in nanometer technology devices. To reducestandby power consumption of DRAM devices, a “sleep” mode is providedfrom external DRAM control logic. In the “sleep” mode, DRAM cells arerequired to be “refreshed” periodically in order to retain cell data.This is accomplished using “self-refresh”. However, smaller and fasterCMOS transistors have significant leakage problems, resulting in therequirement for more frequent “self-refresh” operations than older DRAMtechnologies having lower leakage current issues. Even more seriously,most embedded DRAM macros (DRAM memory circuit blocks used in largersystem-on-chip applications) fabricated with a sub-100 nm logic processrequire very frequent “self-refresh” because of the small cellcapacitance values in certain worst case conditions, like hightemperatures, very fast transistor process and very high power supplylevel, etc. This process, voltage and temperature (PVT) combination caneasily vary during the manufacturing and/or device operation period.Therefore, the internal self-oscillator for the self-refresh signalgeneration should be able to cover a wide range of DRAM cell retentiontimes due to PVT variations.

The variable range of DRAM cell retention time may fall between a fewmicroseconds and few milliseconds if the process technology moves to 45nm or less. Accordingly, upon receipt of a self-refresh mode entryrequest, the internal oscillator for self-refresh has to be initializedto generate the self-refresh signal in a very short period of time. Theself-refresh signal must be produced to properly perform self-refreshfor the shortest possible cell retention time (e.g., microsecond order)and also be maintained for the longest possible cell retention time(e.g., millisecond order) for long periods of reliable oscillationcharacteristics. It is, thus, sought for DRAM devices to perform andachieve reliable self-refresh, even though the cell retention time isvariable across a wide range.

SUMMARY OF THE INVENTION

It is an object of the present invention to provide an improved dynamicrandom access memory (DRAM) having a self-refresh function and animproved method for self-refreshing the memory cells of a DRAM device.

In accordance with one aspect of the present invention, there isprovided a dynamic random access memory (DRAM) device selectivelyoperated in a self-refresh mode and a non self-refresh mode. The DRAMdevice includes a detection circuit for providing a self-refresh modesignal in response to the refresh mode selection. In the DRAM device, anoscillation circuit produces an oscillation signal in response to a DRAMpower indication signal. A self-refresh request circuit provides aself-refresh request signal in response to the self-refresh mode signaland the oscillation signal. A refresh address circuit provides a refreshaddress of DRAM cells to be refreshed in response to the self-refreshrequest signal.

For example, the self-refresh request circuit enables and disables theself-refresh request signal in response to an entry into and an exitfrom the self-refresh mode, respectively. Also, an example of theoscillation circuit is a free-running oscillator for generating theoscillation signal. The free-running oscillator commences the generationof the oscillation signal in response to the power signal. The free-runoscillation continues until it becomes unnecessary. The self-refreshrequest circuit, as an AND circuit, gates and passes the oscillationsignal based on the self-refresh mode signal as the self-refresh requestsignal. Because the oscillation signal is produced from the free-runself-refresh oscillation, independent of the self-refresh mode signal,the oscillator is not required to be initiated by the self-refresh modesignal. Thus, the cell retention time of the DRAM device is not limitedby the oscillator's initiation time. It is, therefore, possible ofself-refreshing the DRAM cells for very wide range of cell retentiontime. The free-run oscillation signal is generated without synchronizingwith the entry and exit of the self-refresh and there is a possibleconflict between the oscillation signal and the self-refresh modesignal.

Advantageously, the self-refresh request circuit performs arbitrationfunction for critical timing situations between the oscillation signaland the self-refresh mode signal. For example, the arbitration functionis achieved by a logic circuit having a latch circuit. The latch circuitdetects the signal conflict and holds it until the next relevanttransition of a pulse's logic state to provide a pulse of theself-refresh request signal. The arbitration function provided by thelatch circuit prevents both a malfunction of the first self-refreshattempt after the entry of self-refresh mode and a malfunction of thelast self-refresh attempt after the exit of the self-refresh mode.

In accordance with another aspect of the present invention, there isprovided a method for self-refreshing a DRAM device having memory cellsoperated in a self-refresh mode and a non self-refresh mode. By themethod, a self-refresh mode signal is provided. The self-refresh modesignal is enabled and disabled in the self-refresh mode and the nonself-refresh mode, respectively. An oscillation signal is generated,independent of the self-refresh mode signal. A self-refresh requestsignal is provided in response to the self-refresh mode signal and theoscillation signal. In response to the self-request signal, an addresssignal is provided. By the address signal, a wordline is selected forrefreshing relevant memory cells of the selected wordline.

For example, the step of generating an oscillation signal includes thestep of generating a free-run oscillation signal in response to a powersignal. The self-refresh mode signal has “high” and “low” logic states.Similarly, the oscillation signal has “high” and “low” logic states. Theself-refresh request signal is provided in response to the logic statesof the self-refresh mode signal and the oscillation signal. Also, theproviding of the self-refresh request signal is ceased in response tothe logic states of the self-refresh mode signal and the oscillationsignal.

Advantageously, the timing for providing and ceasing the self-refreshrequest signal is arbitrated based on the logic states in a case wherethe logic states of the self-refresh mode signal and the oscillationsignal are “high”. For example, in a case where a rising transition ofthe self-refresh mode signal is earlier than that of the oscillationsignal, the self-refresh signal is provided in response to the followingrising transition of the oscillation signal. In a case where a risingtransition of the oscillation signal is earlier than that of theself-refresh mode signal, the generation of the self-refresh signal isceased in response to the following rising transition of the oscillationsignal.

In accordance with another aspect of the present invention, there isprovided a self-refresh controller for use in a dynamic random accessmemory (DRAM) device selectively operated in a self-refresh mode and anon self-refresh mode. In the self-refresh controller, a detectioncircuit for provides a self-refresh mode signal in response to therefresh mode selection. An oscillation circuit produces an oscillationsignal in response to a DRAM power indication signal. In response to theself-refresh request signal, an address signal is provided to refreshrelevant memory cells of a wordline of the DRAM.

In accordance with embodiments of the present invention, the generationof unpredictable self-refresh request pulse of narrow width isprevented. A reliable self-refresh request signal with a wide range ofcell retention time due to the support by the free-run oscillationsignal is provided. Additionally, a temperature compensation circuit canbe added for controlling or adjusting the self-refresh period inaccordance with changes to the temperature along with the free-runningoscillator.

Other aspects and features of the present invention will become apparentto those ordinarily skilled in the art upon review of the followingdescription of specific embodiments of the invention in conjunction withthe accompanying figures.

BRIEF DESCRIPTION OF THE DRAWINGS

Embodiments of the present invention will now be described, by way ofexample only, with reference to the attached Figures, wherein:

FIG. 1A illustrates a self-refresh control circuit block diagram foundin conventional dynamic random access memory (DRAM) devices;

FIG. 1B illustrates a timing sequence for the signals of the DRAM deviceshown in FIG. 1A;

FIG. 2 is a block diagram of a DRAM device self-refresh controller inaccordance with one embodiment of the present invention;

FIG. 3 is a block diagram illustrating a DRAM device self-refreshcontroller in accordance with an embodiment of the present invention;

FIG. 4A is a timing sequence for the signals of the DRAM device shown inFIG. 3 operated with non-overlap between a self-refresh mode signal anda self-refresh oscillation signal at an entry into and an exit from aself-refresh mode;

FIG. 4B is a timing sequence for the signals of the DRAM device shown inFIG. 3 operated with overlap between the self-refresh mode signal andthe self-refresh oscillation signal at the entry into and the exit froma self-refresh mode;

FIG. 5 is a block diagram illustrating a DRAM device self-refreshcontroller in accordance with another embodiment of the presentinvention;

FIG. 6 is a timing sequence for the signals of the DRAM device shown inFIG. 5 operated with overlap between the self-refresh mode signal andthe self-refresh oscillation signal at the entry into and the exit froma self-refresh mode;

FIG. 7 is a flowchart illustrating the arbitration operation of aself-refresh request generator included in the DRAM device shown in FIG.5; and

FIG. 8 is a block diagram illustrating a DRAM device self-refreshcontroller in accordance with an embodiment of the present invention.

DETAILED DESCRIPTION

In the following detailed description of sample embodiments of theinvention, reference is made to the accompanying drawings which form apart hereof, and in which is shown by way of illustration of specificsample embodiments in which the present invention may be practiced.These embodiments are described in sufficient detail to enable those ofordinary skill in the art to practice the present invention, and it isto be understood that other embodiments may be utilized and thatlogical, electrical, and other changes may be made without departingfrom the scope of the present invention. The following detaileddescription is, therefore, not to be taken in a limiting sense, and thescope of the present invention is defined by the appended claims.

FIG. 1A shows a self-refresh controller found in conventional dynamicrandom access memories (DRAMs) and FIG. 1B shows the relative timingsequence for the signals of the DRAM device shown in FIG. 1A. Referringto FIGS. 1A and 1B, a “self-refresh” mode, also known as a “sleep” mode,can be activated by a command signal 111. In response to the commandsignal 111 having a self-refresh entry command “SELF-REF ENTRY”, aself-refresh mode detector 113 enables a self-refresh mode signal 115 soas to be active “high” (i.e., “high” logic level voltage VDD). Inresponse to the “high” self-refresh mode signal 115, an internaloscillator 117 is initiated to commence the generation of a self-refreshoscillation signal 119 having a predetermined duration and frequency.The oscillation signal 119 is combined with other signals by aself-refresh request generator 121 which in turn generates aself-refresh request oscillation signal 123. The request signal 123enables an internal row-address counter 125 to generate a signal 127having an appropriate internal row address. A row-address decoder 129 iscontrolled by the self-refresh request signal 123 and decodes theinternal row address to provide a decoded address signal 131, with theresult that a selected wordline is activated. When the self-refresh modedetector 113 receives a self-refresh exit command “SELF-REF EXIT” on thecommand signal 111, the self-refresh mode signal 115 goes “low” (i.e.,“low” logic level voltage VSS) and the internal oscillator 117 isdisabled, with the result that the generation of the oscillation signal119 is ceased. Thereafter, the self-refresh request signal 123 is nolonger provided to refresh the DRAM memory cells.

In conventional DRAM devices, taking into account the cell retentiontime, the initiation time of the internal oscillator 117 upon receipt ofthe self-refresh mode signal 115 is not critical for refreshing the DRAMcells properly. However, DRAM devices with high-speed operation andhigh-density CMOS ICs fabricated with sub-100 nm technology, forexample, require a shorter initiation time for properly refreshing theDRAM cells thereof. For example, in a case of 90 nm DRAM macro process,an estimated cell retention time is 0.5 ms for refreshing 4K rows. Thus,an initiation time shorter than 125 ns (=0.5 ms/4000) is required forinitiating the oscillator, which subsequently results in a properrefresh operation. However, the initiation time of conventionaloscillators is between 0.5 ms and 32 ms and thus, it does not meet withthe 125 ns requirement for initializing the oscillator for DRAM devicesfabricated with sub-100 nm technology.

FIG. 2 illustrates the self-refresh circuit blocks of a dynamic randomaccess memory (DRAM) device in accordance with one embodiment of thepresent invention. The DRAM device is selectively operated in aself-refresh mode and a normal mode (a non self-refresh mode). Referringto FIG. 2, in response to self-refresh COMMAND, a detector 211 providesa signal 213 for self-refresh to a controller 215. An oscillator 217generates an oscillation signal 219 for self-refresh, initiated by apower-up signal 221. The oscillation signal 219 is provided to thecontroller 215 which in turn provides a request signal 223 forself-refresh to an address decoder 225. The address decoder 225 providesa decoded address signal 227 for self-refresh. The detector 211 enablesand disables the signal 213 in response to the self-refresh mode and thenon self-refresh mode by self-refresh commands, respectively. Thecontroller 215 arbitrates when a timing conflict occurs between thepulses of the signal 213 and the oscillation signal 219.

For example, the oscillator 217 includes a free-running oscillator thatis activated by a power-up signal 221, independent of the generation ofthe signal 213 for self-refresh. The free-running oscillator continuesuntil it is unnecessary or the power to the DRAM device is turned off.Thus, in the DRAM device according to an embodiment of the invention, noexternal initiation of the oscillation for self-refreshing is necessary.Also, with the arbitration function of the controller 215, when theoscillation signal 219 goes “high” earlier than signal 213, the requestsignal 223 is provided in response to the subsequent transition of theoscillation signal 219. Also, when the oscillation signal 219 goes “low”later than the self-refresh signal 213, the request signal 223 is ceasedin response to the subsequent falling transition of the oscillationsignal 219. Thus, the controller 215 arbitrates a timing conflictbetween the self-refresh signal 219 and the self-refresh signal 213.

FIG. 3 shows a DRAM device according to an embodiment of the presentinvention. The circuits of the DRAM device shown in FIG. 3 operate withhigh and low power supply voltages VDD and VSS that correspond to “high”and “low” logic level voltages, respectively. The DRAM device respondsto a self-refresh mode and a normal mode (a non self-refresh mode).

Referring to FIG. 3, a command signal “COMMAND” 311 is fed to aself-refresh mode detector 313, which enables and disables aself-refresh mode signal “SREF_MODE” 315 at the entry into and the exitfrom the self-refresh mode, respectively. The self-refresh mode signal315 is provided to a self-refresh controller 317. The self-refresh modesignal 315 transitions from the “low” logic state to the “high” logicstate (i.e., a rising transition) in response to the “self-refreshentry” command and transitions from the “high” logic state to the “low”logic state (i.e., a falling transition) in response to the“self-refresh exit” command. The self-refresh controller 317 functionsas a logical AND circuit.

A power-up signal “PWRUP” 319 is fed to a power-up driven oscillator 320which in turn provides a self-refresh oscillation signal “SREF_OSC” 325to the self-refresh controller 317. The power-up driven oscillator 320includes a free-running oscillator 321 that generates an oscillationsignal of pulses, independent of the self-refresh mode signal 315. Thefree-running oscillator 321 generates pulses having a predeterminedperiod and width. The power-up signal 319 is provided when the DRAMdevice is turned on and sets an operation switch 323 to the “on” state,thereby connecting the free-running oscillator to VDD. Therefore, thepower supply voltages corresponding to the “high” and “low” logic levelvoltages VDD and VSS are supplied to the free-running oscillator 321 tobe activated to commence oscillation. The free-running oscillator 321continues operating until the switch 323 is turned off with lack of thepower-up signal 319 when the power to the DRAM device is turned off orthe DRAM device enters the “deep power down mode”, wherein no data ofthe DRAM cells is required to be refreshed.

In response to the self-refresh mode signal 315 and the self-refreshoscillation signal 325, the self-refresh controller 317 enables anddisables a self-refresh request oscillation signal “SREF_REQ” 327 thatis provided to an internal row-address counter 329 and a row-addressdecoder 331. The internal row-address counter 329 provides an internalrow address signal 333, RFA[0:n], to the row-address decoder 331 thatdecodes it to provide a decoded address signal 335, with the result thata selected wordline (not shown) is activated. Memory cells of the DRAMdevice connected to the activated wordline are refreshed. Thefree-running oscillator 321 commences its oscillation independently ofthe self-refresh mode entry, and its oscillation is free-running andthus, the generation of the self-refresh request oscillation signal 327is not properly synchronized with the self-refresh mode signal 315.Essentially, the transition of the SREF_MODE signal 315 has nointerrelation with the SREF_OSC signal 325. This can result in undesiredpulses in the SREF_REQ signal under certain situations as will bediscussed in further detail below. It is, however, noted that in theembodiment shown in FIG. 3, the time required to generate self-refreshaddress signals is less than in the conventional approach illustrated inFIG. 1A, since the power-up driven free-running oscillator 320 of FIG. 3ensures there is an oscillation signal available to generateself-refresh address signals as soon as the integrated circuit has beenpowered-up as opposed to waiting until a self-refresh command signal isreceived.

FIG. 4A shows a relative time sequence for the signals of the DRAMdevice shown in FIG. 3. Referring to FIGS. 3 and 4A, the power-up drivenoscillator 320 (the free-running oscillator 321) is initiated as soon asthe DRAM device is turned on (powered-up) in response to the power-upsignal 319, at time t_(PW). Thereafter, the self-refresh oscillationsignal 325 is continuously provided as an input to the self-refreshcontroller 317, regardless of the logic state of the self-refresh modesignal 315. The oscillation signal 325 is an oscillation signal having apredetermined and fixed pulse period T_(OSC) without temperaturecompensation and a predetermined and fixed pulse width T_(OSCW). Thepulse period T_(OSC) is fixed at a time of power-up by a memorycontroller (not shown), for example.

The generation of the self-refresh request oscillation signal 327 iscontrolled by both the self-refresh mode signal 315 and the self-refreshoscillation signal 325 to produce the self-refresh request signal 327for the internal row-address counter 329 and the row-address decoder331. As the self-refresh controller 317 according to the embodimentshown in FIG. 3 functions as a logical AND circuit, the pulses of theself-refresh oscillation signal 325 are gated during the “high” logicstate of the self-refresh mode signal 315. However, the self-refreshoscillation signal 325 is not properly synchronized with theself-refresh mode signal 315 and thus, the self-refresh request signal327 may have unpredictable pulse widths at the entry into and the exitfrom the self-refresh mode. Narrow pulses are therefore possibly activefor an insufficient time, causing malfunction of row address decoding.As a result, the desired wordlines may not be activated and data will belost. Malfunctions caused from the production of such narrow pulses willbe described later with reference to FIG. 4B.

With regard to the pulse timing of the self-refresh request oscillationsignal, there are two possible situations between the self-refresh modesignal 315 and the self-refresh oscillation signal 325. One situation isthat the logic state transition (a rising transition from the “low” to“high” logic state and/or a falling transition from the “high” to “low”logic state) of the self-refresh mode signal 315 does not occur duringthe “high” logic state of the self-refresh oscillation signal 325. Thisis called a “non-overlap condition”. The other situation is a criticalsituation wherein the logic state transition (a rising transition fromthe “low” to “high” logic state and/or a falling transition from the“high” to “low” logic state) of the self-refresh mode signal 315 occursduring the “high” logic state of the self-refresh oscillation signal325. This is called an “overlap condition”.

A discussion of the non-overlap condition follows. The self-refresh modesignal 315 does not change its logic transition during the “high” logicstate of the self-refresh oscillation signal 325. In this situation, asshown in FIG. 4A, the “low” to “high” logic state transition of theself-refresh mode signal 315 is earlier than that of the self-refreshoscillation signal 325 by a time interval (a setup time) ΔT₁. Also, the“high” to “low” logic state transition (i.e., a falling transition) ofthe self-refresh mode signal 315 is earlier than the “high” to “low”logic state transition of the self-refresh oscillation signal 325 by atime interval ΔT₂. In this case, the pulses of the self-refreshoscillation signal 325 are gated by the self-refresh controller 317 thatfunctions as a logical AND circuit. Therefore, the self-refreshcontroller 317 provides the self-refresh request oscillation signal 327,which directly corresponds to the self-refresh oscillation signal 325only while the self-refresh mode signal 315 is at the “high” logicstate. Thus, the providing and ceasing of the self-refresh requestoscillation signal 327 is controlled by and tracks the self-refresh modesignal 315 with only small delays ΔT₁ and ΔT₂ as explained above.

FIG. 4B shows a relative time sequence for the signals of the DRAMdevice in the overlap condition wherein the self-refresh mode signal 315changes its logic state during the “high” logic state of theself-refresh oscillation signal 325. Referring to FIGS. 4B and 3, theself-refresh oscillation signal 325 goes “high” a time interval ΔT₃before the rising transition of the self-refresh mode signal 315. Also,the self-refresh oscillation signal 325 goes “low” a time interval ΔT₄after the falling transition of the self-refresh mode signal 315. If theself-refresh controller 317 functions as a logical AND circuit, it willproduce the self-refresh request oscillation signal 327 having pulses ofwidths ΔT_(PW1) and ΔT_(PW2) at the beginning and ending (i.e., theentry into and the exit from) of the self-refresh mode, as shown in FIG.4B. The pulse widths ΔT_(PW1) and ΔT_(PW2) are narrower than the pulsewidth T_(OSCW) of the oscillation signal 325. Such narrower pulse widthsof the self-refresh request signal 327 may cause a malfunction of rowaddress decoding by the row-address decoder 331. This can result in thewordlines being activated for a duration insufficient for restoring thedata levels. Such malfunction problems possibly caused from the “overlapcondition” at a critical situation can be solved by implementing atiming arbitration circuit into the self-refresh controller 317 as shownin FIG. 5.

FIG. 5 shows a DRAM device in accordance with another embodiment of thepresent invention. The DRAM device shown in FIG. 5 solves the problemswith critical situations described above. Thus, a self-refreshcontroller shown in FIG. 5 is different from that of FIG. 3, and theothers are similar to those of FIG. 3.

Referring to FIG. 5, a command signal “COMMAND” 511 is fed to aself-refresh mode detector 513 which in turn provides a self-refreshmode signal “SREF_MODE” 515 to a self-refresh controller 520. A power-upsignal “PWRUP” 521 is fed to a self-refresh oscillator 530 which in turnprovides a self-refresh oscillation signal “SREF_OSC” 533 to theself-refresh controller 520. The structure of the self-refreshoscillator 530 is the same as the power-up driven oscillator 320 shownin FIG. 3 and it includes a free-running oscillator that generates anoscillation signal. The self-refresh oscillator 530 is activated by thepower-up signal 521 when the DRAM device is turned on. In response tothe self-refresh mode signal 515 and the self-refresh oscillation signal533, the self-refresh controller 520 provides a self-refresh requestoscillation signal “SREF_REQ” 535 to an internal row-address counter537. The self-refresh request oscillation signal “SREF_REQ” 535 isprovided to a row-address decoder 539 also for consideration of timingdelays of signals. The internal row-address counter 537 provides aninternal row address signal 541, RFA[0:n], to the row-address decoder539 that decodes it to provide a decoded address signal 543, with theresult that a selected wordline (not shown) is activated. Memory cellsof the DRAM device connected to the activated wordline are refreshed.

The self-refresh controller 520 is similar to the self-refreshcontroller 317 shown in FIG. 3, but functions as an arbitration circuit.Referring to FIG. 5, the self-refresh controller 520 includes logiccircuitry having cascaded first and second RS-type latches 551 and 553and an AND circuit 555 for arbitrating critical timing conditions. Eachof the first and second RS-latches 551 and 553 includes cross-coupled,two-input NAND gates to form a flip-flop having set and reset inputterminals “S” and “R”. The self-refresh mode signal 515 and theself-refresh oscillation signal 533 are fed to the first RS-latch 551,which includes two NAND gates 561 and 563. An output signal “N1” of theRS-latch 551 (i.e., the output of the NAND gate 561) and theself-refresh oscillation signal 533 are fed to the second RS-latch 553which includes two NAND gates 571 and 573. An output signal “N2” of theRS-latch 553 (i.e., the output of the NAND gate 571) and theself-refresh oscillation signal 533 are fed to the AND circuit 555including a NAND gate 581 and an inverter 583. The output logic signalof the NAND gate 581 is inverted by the inverter 583 to provide theself-refresh request oscillation signal 535. The circuits of the DRAMdevice shown in FIG. 5 operate with high and low power supply voltagesVDD and VSS that correspond to “high” and “low” logic level voltages,respectively.

FIG. 6 shows a relative timing sequence for the signals shown in FIG. 5in the overlap condition of the self-refresh mode signal and theoscillator signal. As shown in FIG. 6, at the self-refresh entry, if therising transition of the self-refresh mode signal 515 occurs during theperiod of the “high” logic state of the self-refresh oscillation signal533, the self-refresh request oscillation signal 535 will not begenerated for the overlap condition, so as to avoid generating narrowpulse ΔT_(PW1) (see FIG. 4B). Such a narrow pulse causes an insufficientcell restore level. Similarly, at the self-refresh exit, if the fallingtransition of the self-refresh mode signal 511 occurs during the “high”logic state of the self-refresh oscillation signal 533, the self-refreshrequest oscillation signal 535 will not be ceased for the overlapcondition, so as to avoid generating narrow pulse ΔT_(PW2) (see FIG.4B). Such a narrow pulse may not be enough to finish cell restorationwith the proper cell charge level.

With the self-refresh entry, the self-refresh mode signal 515transitions from the “low” logic state to the “high” logic state at timet₁₂. At time t₁₁ (the time interval ΔT₃ before time t₁₂), theself-refresh oscillation signal 533 transitions from the “low” logicstate to the “high” logic state. In response to the falling transitionof the self-refresh oscillation signal 533 at time t₁₃ (the widthΔT_(PW1) after time t₁₂), the NAND gates 561 and 563 of the RS-latch 551change their logic states and the output N2 of the NAND gate 571 of theRS-latch 563 changes its logic state from “low” to “high”. However, asthe logic state of the self-refresh oscillation signal 533 is “low”, theAND circuit 555 (the inverter 583) does not change its output logicstate. At time t₁₄ (the pulse period T_(OSC) after time t₁₁), inresponse to the rising transition of the self-refresh oscillation signal533, the AND circuit 555 changes its output logic state from “low” to“high”. In response to the next falling transition of the self-refreshoscillation signal 533 at time t₁₅ (the pulse width ΔT_(OSCW) after timet₁₄), the output of the AND circuit 555 goes “low”. Accordingly, thefirst pulse is provided as the self-refresh request oscillation signal535. Thus, the first overlapped “high” logic states between theself-refresh oscillation signal 533 and the self-refresh mode signal 515does not cause the self-refresh request oscillation signal 535 to begenerated. The subsequent rising transition of the self-refreshoscillation signal 533 at time t₁₄ causes the generation of theself-refresh request oscillation signal 535. Hence, the RS-latches 551and 553 detect the “overlapped” rising transition at time t₁₂ and holdthe generation of the pulse of the self-refresh request oscillationsignal 535 until the subsequent rising transition of the self-refreshoscillation signal 533.

With the self-refresh exit, the self-refresh mode signal 515 transitionsfrom the “high” logic state to the “low” logic state at time t₂₂. Aftertime t₂₁ but before time t₂₂, the output of the RS-latch 553 (the outputN2 of the NAND gate 571) is the “high” logic state. In response to therising transition of the self-refresh oscillation signal 533, the outputof the AND circuit 555 transitions from the “low” logic state to the“high” logic state. At time t₂₂, the logic state of the self-refreshmode signal 515 transitions from the “high” to “low” state, and theoutput N1 of the NAND gate 561 transitions from the “low” logic state tothe “high” logic state. However, the output N2 b of the NAND gate 573keeps its “low” logic state, with the result that the output N2 of theNAND gate 571 does not change its logic state (“high”). Thus, the ANDcircuit 555 (the self-refresh controller 520) maintains its “high” logicstate. Thereafter, the self-refresh oscillator signal 533 transitionsfrom the “high” logic state to the “low” logic state at time t₂₃ (thetime interval ΔT₄ after time t₂₂). Then, the output N2 of the NAND gate571 changes its logic state from “high” to “low”, with the result thatthe output of the AND circuit 555 (the output of the self-refreshcontroller 520) goes “low”. Thereafter, the output N2 of the RS-latch553 maintains its “low” logic state and thus, while the self-refreshoscillation signal 533 transitions from the “low” logic state to the“high” logic state, the self-refresh controller 520 maintains its “low”logic state. Accordingly, the last pulse is provided as the self-refreshrequest oscillation signal 535. Thus, the last overlapped “high” logicstates between the self-refresh oscillation signal 533 and theself-refresh mode signal 515 does not cause the self-refresh requestoscillation signal 535 to be ceased. The subsequent falling transitionof the self-refresh oscillation signal 533 at time t₂₃ ceases thegeneration of the self-refresh request oscillation signal 535. Hence,the RS-latches 551 and 553 detect the “overlapped” falling transition attime t₂₂ and hold the ceasing of the pulse of the self-refresh requestoscillation signal 535 until the subsequent falling transition of theself-refresh oscillation signal 533.

FIG. 7 shows the arbitration operation performed by the self-refreshcontroller 520 shown in FIG. 5. Referring to FIGS. 5, 6 and 7, inresponse to the power-up signal 521, the self-refresh oscillator 530commences its free-run oscillation and the self-refresh oscillationsignal 533 is continuously generated. The arbitration operation isperformed based on relative timing of the self-refresh mode signal 515and the self-refresh oscillation signal 533.

The self-refresh controller 520 determines whether the logic state ofthe self-refresh mode signal 515 for the self-refresh entry (step 711)is “high”. In a case where the logic state is “low” (NO), this step isrepeated. If the logic state becomes “high” (YES), that is forself-refresh entry (see the operation at time t₁₁ in FIG. 6),subsequently the self-refresh controller 520 will determine the logicstate of the self-refresh oscillation signal 533 (step 712). In a casewhere the logic state is “low” (NO), the timing relation between theself-refresh mode signal 515 and the self-refresh oscillation signal 533is the “non-overlap condition” and it is not a critical situation forself-refresh mode entry. Thus, the self-refresh oscillation signal 533is gated based on the self-refresh mode signal 515 (step 713) and theself-refresh request oscillation signal 535 is produced (see theself-refresh request oscillation signal 327 shown in FIG. 4A).

On the other hand, in a case where the logic state of the self-refreshoscillation signal 533 is “high” (YES at step 712), the timing relationbetween the self-refresh mode signal 515 and the self-refreshoscillation signal 533 is in the “overlap condition”. This is a criticalsituation for self-refresh mode entry. In response to the subsequentrising transition of the self-refresh oscillation signal 533, theself-refresh request oscillation signal 535 is produced (step 714) (seethe operation between times t₁₁-t₁₄ shown in FIG. 6).

After the self-refresh request oscillation signal 535 is produced (step713 or 714), the logic state of the self-refresh mode signal 515 isagain determined for the self-refresh exit (step 715). In a case wherethe logic state is “high” (NO), the gating of the self-refreshoscillation signal 533 based on the self-refresh mode signal 515 isrepeated (step 713). If the logic state becomes “low” (YES) (see theoperation at time t₂₂ in FIG. 6), for self-refresh exit, subsequentlythe self-refresh controller 520 will determine the logic state of theself-refresh oscillation signal 533 (step 716). In a case where thelogic state is “low” (YES), the timing condition of the self-refreshmode signal 515 and the self-refresh oscillation signal 533 is in the“non-overlap condition” and it is not a critical situation forself-refresh mode exit. The generation of the self-refresh requestoscillation signal 535 ends without generation of any more pulses of theself-refresh request oscillation signal 535 (see the self-refreshrequest oscillation signal 327 shown in FIG. 4A).

On the other hand, in a case where the logic state of the self-refreshoscillation signal 533 is “high” (NO at step 716), the timing conditionof the self-refresh mode signal 515 and the self-refresh oscillationsignal 533 is in the “overlap condition”, being a critical situation.The subsequent falling transition of the self-refresh oscillation signal533 ceases the generation of the pulses of the self-refresh requestoscillation signal 535 (step 717) (see the operation between timest₂₁-t₂₃ shown in FIG. 6).

The self-refresh controller 520 includes an arbitration circuit fordetecting a critical timing situation that may create output signals ofvariable pulse width, and waiting for a more suitable timing situationthat will ensure no variability in pulse widths before generating theappropriate signal. With the two RS-latches 551 and 553 of thearbitration circuit, while the “high” logic state of the self-refreshoscillation signal 533 is overlapped with that of the self-refresh modesignal 511 at the self-refresh entry and/or the self-refresh exit, theoverlapped pulses of the self-refresh oscillation signal 533 are nottransferred as the self-refresh request oscillation signal 535.Therefore, pulses having widths that are too narrow (e.g., pulse widthsΔT_(PW1) and ΔT_(PW2) as shown by dot lines in FIG. 6) are not providedas the resulting self-refresh request oscillation signal 535 at thebeginning (entry) of the self-refresh mode and/or at the end (exit) ofthe self-refresh mode.

The DRAM device according to the embodiment of the present invention asdescribed above allows a free-running oscillation for self-refreshthereof. Hence, the DRAM cells are effectively self-refreshed, while theoscillator's initiation time and the cell retention time are given by:

T _(SREF) >t _(REF) /N _(ROW)  (1)

where:

T_(SREF) is the initiation time of the oscillator;

t_(REF) is the DRAM cell retention time; and

N_(ROW) is the number of rows of the DRAM device.

Furthermore, in critical “overlapping” conditions between the pulses ofthe free-running oscillation and self-refresh mode signal, the DRAMdevice according to an embodiment of the present invention performs thefunctions for detecting the overlap of the “high” logic states and forholding the held overlapped logic state. Therefore, the oscillator isindependently operated after power-up and the internal self-refreshrequest signal is properly provided by gating and buffering the logicstate transitions in overlap conditions, where the logic statetransitions are mainly used for the purpose of the DRAM cell refreshoperation. For example, with sub-100 nm technology feature size, futureDRAM devices or macros may have a wide range of refresh characteristicsbecause of minimally sized transistors, temperature variation, voltagevariation and process variation. It is possible for the DRAM deviceaccording to the embodiment of the present invention that the cells areself-refreshed regardless of timing of the self-refresh entry and exit.

FIG. 8 shows a DRAM device according to another embodiment of thepresent invention. Referring to FIG. 8, a command signal “COMMAND” 811is fed to a self-refresh mode detector 813, which in turn provides aself-refresh mode signal “SREF_MODE” 815 to a self-refresh controller817. A power-up signal “PWRUP” 819 is fed to a self-refresh oscillator820 which in turn provides a self-refresh oscillation signal “SREF_OSC”825 to the self-refresh controller 817. The self-refresh oscillator 820includes a free-running oscillator 821 that generates an oscillationsignal to produce the self-refresh oscillation signal 825. Theself-refresh oscillator 820 is activated by the power-up signal 819 whenthe DRAM device is turned on. In response to the self-refresh modesignal 815 and the self-refresh oscillation signal 825, the self-refreshcontroller 817 provides a self-refresh request signal “SREF_REQ” 827 toan internal row-address counter 829. In this embodiment, theself-refresh request signal SREF_REQ” 827 is also provided to arow-address decoder 831 for consideration of timing delays of signals.The internal row-address counter 829 provides an internal row addresssignal 833, RFA[0:n], to the row-address decoder 831 that decodes it toprovide a decoded address signal 835, with the result that a selectedwordline (not shown) is activated.

The DRAM device shown in FIG. 8 is based on the DRAM device shown inFIG. 5, with additional features. Referring to FIG. 8, added is acompensation controller 841 that receives a compensation signal 843. Thecompensation controller 841 provides a control signal 845 to theself-refresh oscillator 820 to adjust the oscillation pulse periodT_(OSC)to cover a wide range of DRAM cell retention time varied by thetransistor process, power supply level, temperature, etc.

If the compensation signal 843 includes information on a change to thedevice temperature, the compensation controller 841 provides the controlsignal 845 including a control value of the temperature change. Thefree-running oscillator 821 adjusts or varies the pulse period T_(OSC)or both the pulse period T_(OSC) and the pulse width T_(OSCW). Inaccordance with the device temperature, the self-refresh cycle (whichdirectly relates to the pulse period T_(OSC)) or both the self-refreshcycle and the self-refresh time interval (which directly relates to thepulse width T_(OSCW)) are variably controlled (“temperature controlself-refresh (TCSR”). The self-refresh cycle can thus be varied to belonger when the device temperature drops below nominal, and varied to beshorter when the device temperature increases above nominal, due to thedependence of current leakage on temperature of the device.

Similarly, if the control information of the compensation signal 843 isa change to the power supply voltage (e.g., the “high” level voltageVDD), with control by the compensation controller 841, the self-refreshcycle or both the self-refresh cycle and the self-refresh time intervalare variably controlled. Furthermore, another type of controlinformation can be provided on the compensation signal 843 by a memorycontroller (not shown) to variably control the self-refresh. Therefore,it is possible for the DRAM device according to the embodiment of thepresent invention that the cells are self-refreshed over a wide range ofcell retention time.

In the above-described embodiments, the operation has been describedbased on the active “high” signals for the purpose of simplicity. Thecircuits may be designed to perform the operation based on the “low”active signals, in accordance with a design preference. The self-refreshoscillator may further include a frequency divider for performingfrequency down of the oscillation signal from the free-runningoscillator. In a case of temperature control compensation for theself-refresh circuits shown in FIG. 8, the control signal from thecompensation controller can change or adjust both or either of theoscillation frequency and the frequency division ratio, so as tovariably control the self-refresh. The self-refresh request oscillationsignal “SREF_REQ” can be provided to the internal row-address counterwithout providing it to the row-address decoder.

In the embodiments described above, the device elements and circuits areconnected to each other as shown in the figures, for the sake ofsimplicity. In practical applications of the present invention to DRAMdevices and semiconductor ICs, circuits, elements, devices, etc. may beconnected directly to each other. As well, circuits, elements, devices,etc. may be connected indirectly to each other through other circuits,elements, devices, etc., necessary for operation of the DRAM devices andsemiconductor ICs. Thus, in actual configuration of DRAM devices andsemiconductor ICs, the circuit, elements, devices, etc. are coupled with(directly or indirectly connected to) each other.

The above-described embodiments of the present invention are intended tobe examples only. Alterations, modifications and variations may beeffected to the particular embodiments by those of skill in the artwithout departing from the scope of the invention, which is definedsolely by the claims appended hereto.

1. A semiconductor device comprising a dynamic random access memory(DRAM) selectively operated in a self-refresh mode and a nonself-refresh mode, the semiconductor device comprising: a self-refreshrequester for providing a self-refresh request signal in response to anoscillation signal during a selected refresh mode; and a refreshaddresser for providing a refresh address of DRAM cells to be refreshedin response to the self-refresh request signal.
 2. The semiconductordevice of claim 1, further including an oscillator for producing theoscillation signal in response to a DRAM power indication signal, and 3.The semiconductor device of claim 1, further including a detector forproviding a self-refresh mode signal in response to the selected refreshmode.
 4. A method for use in a semiconductor device comprising a dynamicrandom access memory (DRAM) having memory cells operated in aself-refresh mode and a non self-refresh mode, the DRAM being refreshed,the method comprising: providing a self-refresh request signal in theself-refresh mode and in response to an oscillation signal; andproviding an address signal in response to the self-request signal forrefreshing relevant memory cells of a wordline selected by the addresssignal.
 5. The method of claim 4, further including providing aself-refresh mode signal that is enabled in the self-refresh mode. 6.The method of claim 5, further including generating the oscillationsignal independent of the self-refresh mode signal.